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IEC 63229-2021 pdf free

IEC 63229-2021 pdf free.Semiconductor devices – Classification of defects in gallium nitride epitaxial film on silicon carbide substrate.
IEC 63229 gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SIC substrate and does not include defects caused by subsequent processes.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following addresses:
• IEC Electropedia: available at http://www.electropedia.org!
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1 Gallium nitride GaN compound semiconductor crystal composed of gallium and nitrogen
3.2 substrate material on which epitaxial layer is deposited
[SOURCE: IEC 63068-1:2019, 3.9, modified — Homoepitaxial has been replaced by “epitaxial”.J
3.3 Silicon carbide SiC semiconductor crystal composed of silicon and carbon, which exhibits a large number of polytypes such as 4H and 6H
Note 1 to entry: A symbol like 4H gives the number of periodic stacking layers (2. 3. 4….) and the crystal symmetry (H=hexagonal) of each polytype.
[SOURCE: IEC 63068-1:2019. 3.1, modified — Polytype of 3C has been deleted.]IEC 63229 pdf download.

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